Surface Damage of Compound Semiconductors by Ion Sputtering

Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering

Low energy Ar ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solut...

Amorphization of elemental and compound semiconductors upon ion implantation

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...

Compound Semiconductors

Effect of surface morphology on the sputtering yields. I. Ion sputtering from self-affine surfaces

As extensive experimental studies have shown, under certain conditions, ion bombardment of solid targets induces a random (self-affine) morphology on the ion-eroded surfaces. The rough morphology development is known to cause substantial variations in the sputtering yields. In this article, we present a theoretical model describing the sputter yields from random, self-affine surfaces subject to...

Effect of surface morphology on the sputtering yields. II. Ion sputtering from rippled surfaces

Off-normal ion bombardment of solid targets with energetic particles often leads to development of periodically modulated structures on the surfaces of eroded materials. Ion-induced surface roughening, in its turn, causes sputtering yield changes. We report on a comprehensive theoretical study of the effect of rippled surface morphology on the sputtering yields. The yield is computed as a funct...